• DocumentCode
    1554361
  • Title

    High temperature characteristics of GaAs MESFET devices fabricated with AlAs buffer layer

  • Author

    Lee, R. ; Trombley, G. ; Johnson, B. ; Reston, R. ; Misoon Mah ; Havasy, C. ; Ito, C.

  • Author_Institution
    Res. Div., Solid State Electron. Directorate, US Air Force Wright Lab., Dayton, OH, USA
  • Volume
    16
  • Issue
    6
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    We have investigated the influence of AlAs buffer layers on MESFET drain leakage current at temperatures from 25-350/spl deg/C. The experimental results show that subthreshold drain leakage current is substantially decreased with increasing AlAs layer thickness. For a 1 μm×200 μm MESFET with 2500 /spl Aring/ of AlAs buffer layer, we have obtained 78 μA of subthreshold drain leakage current at 350/spl deg/C ambient temperature. This leakage current value is a factor of 2.5 improvement over the best previously reported results at 350/spl deg/C.
  • Keywords
    Schottky gate field effect transistors; 1 micron; 25 to 350 degC; 2500 angstrom; 78 muA; GaAs-AlAs; MESFET devices; ambient temperature; buffer layer; high temperature characteristics; subthreshold drain leakage current; Aerospace electronics; Buffer layers; Conductivity; Gallium arsenide; Leakage current; MESFETs; Semiconductor materials; Space technology; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.790730
  • Filename
    790730
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554361