Title :
SiGe 140 GHz ring-oscillator-based injection-locked frequency divider
Author :
Hyogi Seo ; Jongwon Yun ; Jae-Sung Rieh
Author_Institution :
LG Electron., Seoul, South Korea
Abstract :
Presented is a D-band divide-by-3 injection-locked frequency divider (ILFD) based on a ring oscillator in a 0.18 μm SiGe BiCMOS technology. The ILFD exhibits a locking range of 7.9 GHz (132.5-140.4 GHz) at an input signal power of -2 dBm, dissipating a total DC power of 71.2 mW. The ILFD core occupies an area of 0.0021 mm2.
Keywords :
BiCMOS integrated circuits; frequency dividers; injection locked oscillators; silicon compounds; BiCMOS technology; D-band divide-by-3 injection-locked frequency divider; SiGe; frequency 132.5 GHz to 140.4 GHz; frequency 140 GHz; frequency 7.9 GHz; power 71.2 mW; ring-oscillator-based injection-locked frequency divider;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1273
