Title :
Analysis of kink-related backgating effect in GaAs MESFET
Author :
Horio, Kazushige ; Usami, Kazuoki
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
Two-dimensional simulation of backgating effect in a GaAs MESFET is made in which impact ionization of carriers and deep donors "EL2" in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.
Keywords :
Schottky gate field effect transistors; GaAs; MESFET; deep donors; impact ionization; kink-related backgating effect; physical mechanism; two-dimensional simulation; Charge carrier processes; Electrons; Energy capture; Gallium arsenide; Impact ionization; MESFETs; Poisson equations; Spontaneous emission; Virtual colonoscopy; Voltage;
Journal_Title :
Electron Device Letters, IEEE
