High performance of high-voltage 4H-SiC Schottky barrier diodes

High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes. A typical specific on-resistance (R/sub on/) of these devices was 1.4/spl times/10/sup 3/ /spl Omega/ cm/sup 3/ at 24/spl deg/C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R/sub on/´s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage. As for Schottky contact metals, Au, Ni, and Ti were employed in this study. The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.