A 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT)

Author

Parthasarathy, Vijay ; Bhalla, Anup ; Chow, T. Paul

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

283

Lastpage

285

Abstract

In this paper we report a 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT), which incorporates a heavily doped p-type diffusion at the edges of the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in this new device along with separate turn-on and turn-off regions. A 70% improvement in the maximum controllable current density during resistive turn-off over the conventional BRT has been demonstrated in numerical simulations and experimental measurements.

Keywords

MOS-controlled thyristors; 550 V; gate controlled turn-off features; gate controlled turn-on features; heavily doped p-type diffusion; isolated channel base resistance controlled thyristor; maximum controllable current density; numerical simulations; turn-off capability; Cathodes; Current density; Electric resistance; Electrons; Implants; Insulated gate bipolar transistors; MOSFET circuits; Modeling; Numerical simulation; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790736

Filename

790736