DocumentCode :
1554396
Title :
Properties of Si3N4/SixGe1-x metal-insulator-semiconductor capacitors
Author :
Reed, Jeff ; Mui, D.S.L. ; Jiang, Wei ; Morkoc, H.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume :
27
Issue :
20
fYear :
1991
Firstpage :
1826
Lastpage :
1827
Abstract :
The density of fast interface states was studied in Si3N4/Si0.8Ge0.2 metal-insulator-semiconductor (MIS) capacitors. The interface state density does not appear to be strongly affected by the presence of a thin Si interlayer between the nitride and SiGe alloy. This is in contrast to the results when SiO2 is used as the insulator material in similar structures.
Keywords :
Ge-Si alloys; interface electron states; metal-insulator-semiconductor devices; silicon compounds; Si 3N 4-Si xGe 1-x; fast interface states; interface state density; metal-insulator-semiconductor capacitors; thin Si interlayer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19911134
Filename :
97200
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1554396
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