Title :
In0.52Al0.48As/In0.53Ga0.47As lateral resonant tunnelling transistor
Author :
Seabaugh, A.C. ; Randall, J.N. ; Kao, Y.-C. ; Bouchard, A.M.
Author_Institution :
Central Res. Lab., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The first fabrication and characterisation are reported for a lateral resonant tunnelling transistor formed in the In0.52Al0.48As/In0.53Ga0.47As system lattice-matched to InP. Strong multiple negative differential resistances (NDR) and transconductances are observed indicative of resonant tunnelling across depletion-defined tunnel-barriers in the channel of a two-dimensional electron gas. Calculations of the potential energy surface and quasibound state spectrum for this heterostructure provide qualitative understanding of the device operation and close agreement with the measured multiple-NDR peak spacings.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; negative resistance; resonant tunnelling devices; In 0.52Al 0.48As-In 0.53Ga 0.47As; InP; depletion-defined tunnel-barriers; dual gate MODFET; lateral resonant tunnelling transistor; multiple negative differential resistances; potential energy surface; quasibound state spectrum; transconductances; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911139
