Title :
Passive modelocking due to diagonal optical transition in asymmetric double quantum well
Author :
Buyalo, M.S. ; Gadzhiyev, I.M. ; Gorbacevich, A.A. ; Egorov, A.Yu. ; Bakshaev, I.O. ; Zadiranov, Yu.M. ; Il´inskaya, N.D. ; Portnoi, E.L.
Author_Institution :
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
Abstract :
Passive modelocking (PML) due to diagonal optical transition was observed in two coupled asymmetric double quantum well laser structures for the first time. Two InGaAs/GaAs QW structures with different barrier width between wells were compared. Passive modelocking in thin barrier structures was realised at reverse biases between 0.7-1.1 V when carrier tunnelling takes place. In structures with a thick barrier, PML was observed only at reverse biases above 3.3 V when the absorption edge is shifted to the lasing wavelength due to the quantum confinement Stark effect.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser mode locking; light absorption; quantum confined Stark effect; quantum well lasers; tunnelling; InGaAs-GaAs; absorption edge; asymmetric double quantum well laser structure; barrier structure; carrier tunnelling; diagonal optical transition; lasing wavelength; passive modelocking; quantum confinement Stark effect; voltage 0.7 V to 1.1 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1181
