Title :
InGaAs pin detector array integrated with AlGaAs/GaAs grating demultiplexer by total internal reflector
Author :
Hsu, Shih-Hsiang ; King, O. ; Johnson, F.G. ; Hryniewicz, J.V. ; Chen, Y.J. ; Stone, D.R.
Author_Institution :
Lasertron Inc., Bedford, MA, USA
fDate :
7/22/1999 12:00:00 AM
Abstract :
A WDM photodetector array is demonstrated which is realised by the advanced integration of a channel planar waveguide and a grating demultiplexer by using a total internal reflector to couple the optical signal from the waveguide into the detector array. The device was fabricated using solid source molecular beam epitaxy to grow a multilayer structure that includes a five-layer, low loss (<1 dB/cm), AlGaAs/GaAs waveguide, an InP buffer layer, and an In0.53Ga 0.47As pin detector. The channel spacing is 2 nm over the 152-1550 nm wavelength range and the passband of the filter is 1 nm at 1 dB level
Keywords :
III-V semiconductors; aluminium compounds; demultiplexing equipment; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; wavelength division multiplexing; 1520 to 1550 nm; AlGaAs-GaAs; AlGaAs/GaAs grating demultiplexer; In0.53Ga0.47As; InGaAs; InGaAs pin detector array; OEIC; Rowland circle; WDM photodetector array; advanced integration; channel planar waveguide; five-layer low loss waveguide; multilayer structure; solid source molecular beam epitaxy; total internal reflector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990847
