InGaAs pin detector array integrated with AlGaAs/GaAs grating demultiplexer by total internal reflector

Author

Hsu, Shih-Hsiang ; King, O. ; Johnson, F.G. ; Hryniewicz, J.V. ; Chen, Y.J. ; Stone, D.R.

Author_Institution

Lasertron Inc., Bedford, MA, USA

Volume

35

Issue

15

fYear

1999

fDate

7/22/1999 12:00:00 AM

Firstpage

1248

Lastpage

1249

Abstract

A WDM photodetector array is demonstrated which is realised by the advanced integration of a channel planar waveguide and a grating demultiplexer by using a total internal reflector to couple the optical signal from the waveguide into the detector array. The device was fabricated using solid source molecular beam epitaxy to grow a multilayer structure that includes a five-layer, low loss (<1 dB/cm), AlGaAs/GaAs waveguide, an InP buffer layer, and an In_0.53Ga _0.47As pin detector. The channel spacing is 2 nm over the 152-1550 nm wavelength range and the passband of the filter is 1 nm at 1 dB level

Keywords

III-V semiconductors; aluminium compounds; demultiplexing equipment; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; wavelength division multiplexing; 1520 to 1550 nm; AlGaAs-GaAs; AlGaAs/GaAs grating demultiplexer; In_0.53Ga_0.47As; InGaAs; InGaAs pin detector array; OEIC; Rowland circle; WDM photodetector array; advanced integration; channel planar waveguide; five-layer low loss waveguide; multilayer structure; solid source molecular beam epitaxy; total internal reflector;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990847

Filename

790778