• DocumentCode
    1554514
  • Title

    1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition

  • Author

    Sato, S. ; Satoh, S.

  • Author_Institution
    Gen. Electron. Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
  • Volume
    35
  • Issue
    15
  • fYear
    1999
  • fDate
    7/22/1999 12:00:00 AM
  • Firstpage
    1251
  • Lastpage
    1252
  • Abstract
    1.3 μm continuous-wave operation of highly strained GaInNAs/GaAs double quantum-well lasers grown by metal organic chemical vapour deposition has been demonstrated. The threshold current and threshold current density of the 700 μm long laser at 20°C were 63 mA and 1.2 kA/cm2, respectively. These are the lowest values ever reported for 1.3 μm GaInNAs/GaAs lasers under continuous wave operation. Characteristic temperatures as high as 128 K were observed under continuous-wave operation
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.3 micrometre; 128 K; 20 degC; 63 mA; 700 micron; GaInNAs-GaAs; III-V semiconductors; characteristic temperatures; continuous-wave operation; highly strained double quantum-well lasers; metal organic chemical vapour deposition; threshold current; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990858
  • Filename
    790780
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554514