• DocumentCode
    1554524
  • Title

    Observation of power dependent linewidth enhancement factor in 1.55 mu m strained quantum well lasers

  • Author

    Nakajima, H. ; Bouley, J.-C.

  • Author_Institution
    Lab. de Bagneux, CNET, France
  • Volume
    27
  • Issue
    20
  • fYear
    1991
  • Firstpage
    1840
  • Lastpage
    1841
  • Abstract
    An optical power dependence of the linewidth enhancement factor in 1.55 mu m strained multiquantum well distributed feedback lasers operating at far above the lasing threshold (up to 10.5 times) has been observed. The linewidth enhancement factor, measured through optical injection locking, increases significantly at high power. A correlation between increase in the linewidth enhancement factor and the linewidth floor is shown.
  • Keywords
    distributed feedback lasers; semiconductor junction lasers; spectral line breadth; 1.55 micron; In xGa 1-xAs-InGaAsP; lasing threshold; linewidth enhancement factor; optical injection locking; optical power dependence; strained multiquantum well distributed feedback lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911143
  • Filename
    97209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554524