• DocumentCode
    1554569
  • Title

    2 μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector

  • Author

    Jourba, S. ; Besland, M.-P. ; Gendry, M. ; Garrigues, M. ; Leclercq, J.-L. ; Rojo-Romeo, P. ; Viktorovich, P. ; Cortial, S. ; Hugon, X. ; Pautet, C.

  • Author_Institution
    Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France
  • Volume
    35
  • Issue
    15
  • fYear
    1999
  • fDate
    7/22/1999 12:00:00 AM
  • Firstpage
    1272
  • Lastpage
    1274
  • Abstract
    Experimental results are presented for a resonant cavity enhanced photodetector operating at 2 μm based on absorption in a single, strain-compensated, In0.83Ga0.17As quantum well. The device exhibits a selectivity of 9 nm, and 18% quantum efficiency. InP/InGaAs and Si/SiO2 material systems are used for the bottom and top Bragg reflectors of the resonant cavity, respectively. The dark current densities are lower than 10-6 A/cm2 at 2 V reverse bias
  • Keywords
    III-V semiconductors; cavity resonators; gallium arsenide; indium compounds; infrared detectors; optical resonators; photodetectors; photodiodes; quantum well devices; 2 mum; Bragg reflectors; In0.83Ga0.17As; In0.83Ga0.17As quantum well; InP-InGaAs; Si/SiO2; dark current densities; quantum efficiency; resonant cavity enhanced InP/InGaAs single quantum well photo-detector; selectivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990620
  • Filename
    790794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554569