DocumentCode :
1554569
Title :
2 μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector
Author :
Jourba, S. ; Besland, M.-P. ; Gendry, M. ; Garrigues, M. ; Leclercq, J.-L. ; Rojo-Romeo, P. ; Viktorovich, P. ; Cortial, S. ; Hugon, X. ; Pautet, C.
Author_Institution :
Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France
Volume :
35
Issue :
15
fYear :
1999
fDate :
7/22/1999 12:00:00 AM
Firstpage :
1272
Lastpage :
1274
Abstract :
Experimental results are presented for a resonant cavity enhanced photodetector operating at 2 μm based on absorption in a single, strain-compensated, In0.83Ga0.17As quantum well. The device exhibits a selectivity of 9 nm, and 18% quantum efficiency. InP/InGaAs and Si/SiO2 material systems are used for the bottom and top Bragg reflectors of the resonant cavity, respectively. The dark current densities are lower than 10-6 A/cm2 at 2 V reverse bias
Keywords :
III-V semiconductors; cavity resonators; gallium arsenide; indium compounds; infrared detectors; optical resonators; photodetectors; photodiodes; quantum well devices; 2 mum; Bragg reflectors; In0.83Ga0.17As; In0.83Ga0.17As quantum well; InP-InGaAs; Si/SiO2; dark current densities; quantum efficiency; resonant cavity enhanced InP/InGaAs single quantum well photo-detector; selectivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990620
Filename :
790794
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1554569
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