• DocumentCode
    1554573
  • Title

    Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh

  • Author

    Chen, Yen-Ann ; Hsu, Ming-Lung ; Laih, Li-Hong ; Hong, Jyh-Wong ; Chang, Chun-Yen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    35
  • Issue
    15
  • fYear
    1999
  • fDate
    7/22/1999 12:00:00 AM
  • Firstpage
    1274
  • Lastpage
    1275
  • Abstract
    A conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-film light-emitting diode (TFLED) at a low temperature (~180°C). The obtained TFLED had a brightness (B) of 1060 cd/m2 at an injection current density (J) of 600 mA/cm 2 and a threshold voltage (Vth) of 12.6 V, which were much better than those of 330 cd/m2 and 18.5 V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh
  • Keywords
    brightness; current density; light emitting diodes; plasma CVD; silicon compounds; thin film devices; 12.6 V; 180 degC; PECVD; SiC; SiC-based thin-film LED; SiC-based thin-film light-emitting diode; TFLED; brightness; injection current density; low temperature; plasma-enhanced CVD system; plasma-enhanced chemical vapour deposition; stainless steel mesh; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990786
  • Filename
    790795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554573