Title :
MOS noise performance under impedance matching constraints
Author :
Janssens, J. ; Steyaert, H.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
fDate :
7/22/1999 12:00:00 AM
Abstract :
MOS noise performance under source matching constraints is analysed for an improved impedance matching scheme, using both classical and non-quasistatic noise models. The tradeoff between achieving a low noise figure and a high power gain when preserving a source match is investigated and clarified
Keywords :
MOSFET; impedance matching; semiconductor device models; semiconductor device noise; MOS transistor; classical noise model; impedance matching; noise figure; nonquasistatic noise model; power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990837
