Title :
New approach to the frequency response analysis of an InGaAs avalanche photodiode
Author :
Shiba, T. ; Ishimura, E. ; Takahashi, K. ; Namizaki, H. ; Susaki, W.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
10/1/1988 12:00:00 AM
Abstract :
The frequency response of an avalanche photodiode has been calculated by solving the transport equations, taking the electric field profile into account. The relationship between the carrier concentration (Nb) in the multiplication layer and the frequency response has been obtained for the first time. This calculation has been carried out for a conventional In0.53Ga0.47As avalanche photodiode. The results explain well present experimental data. The saturation velocity of holes in InP is estimated to be 2×106 cm/s. The upper limitation of the gain-bandwidth product is estimated to be 140 GHz at Nb=2×1017 cm-3
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; 140 GHz; III-V semiconductors; In0.53Ga0.47As; avalanche photodiode; carrier concentration; electric field profile; frequency response analysis; gain-bandwidth product; holes; saturation velocity; Absorption; Avalanche photodiodes; Bandwidth; Equations; Frequency response; Indium gallium arsenide; Indium phosphide; Ionization; Niobium; Optical fiber communication;
Journal_Title :
Lightwave Technology, Journal of
