Title :
Ohmic contact to p-ZnSe and p-ZnMgSSe
Author :
Chang, S.J. ; Chen, W.R. ; Su, Y.K. ; Tu, R.C. ; Lan, W.H. ; Chang, H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/22/1999 12:00:00 AM
Abstract :
The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2×10-4 Ω cm2 after a simple voltage stress. The authors have also deposited Ge3Cu/Pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8×10-5 Ω cm2 and 3.8×10-5 Ω cm2 for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and p-ZnMgSSe, respectively. It was also found that the Cu 3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3 Ge/Pt/Au on p-ZnMgSSe
Keywords :
II-VI semiconductors; contact resistance; magnesium compounds; ohmic contacts; semiconductor epitaxial layers; zinc compounds; Ge/Cu ohmic contact; ZnMgSSe-Ge-Cu; ZnSe-Ge-Cu; p-ZnMgSSe epitaxial layer; p-ZnSe epitaxial layer; specific contact resistance; voltage stress;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990835
