Evidence for large monomolecular recombination contribution to threshold current in 1.3 μm GaInNAs semiconductor lasers

Author

Fehse, R. ; Jin, S. ; Sweeney, S.J. ; Adams, A.R. ; O´Reilly, E.P. ; Riechert, H. ; Illek, S. ; Egorov, A.Yu.

Author_Institution

Dept. of Phys., Surrey Univ., Guildford, UK

Volume

37

Issue

25

fYear

2001

fDate

12/6/2001 12:00:00 AM

Firstpage

1518

Lastpage

1520

Abstract

The spontaneous emission, L, through a window in the substrate electrode of 1.3 μm GaInNAs MQW lasers was studied as a function of current, I, and temperature, T Close to room temperature, a characteristic temperature at threshold T,(L) T was observed as expected for band-to-band recombination in ideal quantum well devices. However, T ₀(I_th)≃T/3 indicating other processes occur. Analysis of the variation of L with I, reveals that monomolecular recombination contributes more than 50% to the total current at threshold and also that some Auger recombination may be present

Keywords

Auger effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; spontaneous emission; waveguide lasers; 1.3 micron; 298 K; Auger recombination; GaInNAs; GaInNAs MQW lasers; GaInNAs semiconductor lasers; band-to-band recombination; characteristic temperature; current; ideal quantum well devices; monomolecular recombination; monomolecular recombination contribution; room temperature; spontaneous emission; substrate electrode; temperature; threshold; threshold current; window;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20011033

Filename

972187