Title :
GaInAs monolithic photoreceiver integrating p-i-n/JFET with diffused junctions and a resistor
Author :
Renaud, J.C. ; Nguyen, N.L. ; Allovon, M. ; Blanconnier, P. ; Vuye, S. ; Scavannec, A.
Author_Institution :
CNET, Bagneux, France
fDate :
10/1/1988 12:00:00 AM
Abstract :
An integrated p-i-n/JFET/resistor has been developed using a GaInAs epitaxial structure grown on a planar substrate A four-layered structure allows separate optimization of both active devices. Owing to the good performances and high reliability of individual components, the sensitivity of these monolithic photoreceivers is evaluated as -29 dBm at 560 Mb/s (10-9 bit error rate). Remarkable stability over time is exhibited
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; monolithic integrated circuits; photodiodes; 560 Mbit/s; GaInAs monolithic photoreceiver; III-V semiconductors; bit error rate; diffused junctions; epitaxial structure; four-layered structure; p-i-n photodiode; p-i-n/JFET; planar substrate; reliability; resistor; stability; Bit error rate; FETs; Fabrication; Indium phosphide; Integrated circuit technology; P-i-n diodes; PIN photodiodes; Resistors; Substrates; Transconductance;
Journal_Title :
Lightwave Technology, Journal of
