Title :
Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors
Author :
Klein, P.B. ; Binari, S.C. ; Ikossi, K. ; Wickenden, A.E. ; Koleske, D.D. ; Henry, R.L.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
12/6/2001 12:00:00 AM
Abstract :
The same traps that produce current collapse in AlGaN/GaN high electron mobility transistors are also shown to limit the sheet charge that is attainable in these devices by the trapping of channel carriers at equilibrium (no applied bias). In the present case, this reduction in sheet charge was found comparable to that induced by current collapse
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electric charge; electron traps; gallium compounds; high electron mobility transistors; hot carriers; two-dimensional electron gas; wide band gap semiconductors; 2DEG; AlGaN-GaN; AlGaN/GaN HEMT; channel carriers; current collapse; deep centres; deep electron traps; high electron mobility transistors; nitride-based devices; sheet charge; two-dimensional electron gas;
Journal_Title :
Electronics Letters
