Title :
Fully monolithic 22 GHz-band AlGaAs/GaAs HBT oscillator
Author :
Hayama, N. ; Shimizu, J. ; Honjo, Kazuhiko
Author_Institution :
Microelectron. Res. lab., NEC Corp., Kawasaki, Japan
Abstract :
The large signal design and performance is described for a fully monolithic 22 GHz-band oscillator implemented using a selfaligned AlGaAs/GaAs heterojunction bipolar transistor. The developed oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5%, and phase noise of -78 dBc/Hz at 100 kHz off-carrier under free-running conditions. These results were in good agreement with the design results obtained using a harmonic balance simulator.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; 22 to 22.16 GHz; AlGaAs-GaAs; HBT oscillator; SHF; harmonic balance simulator; heterojunction bipolar transistor; large signal design; monolithic microwave IC; self-aligned HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911156
