DocumentCode
1555067
Title
Fully monolithic 22 GHz-band AlGaAs/GaAs HBT oscillator
Author
Hayama, N. ; Shimizu, J. ; Honjo, Kazuhiko
Author_Institution
Microelectron. Res. lab., NEC Corp., Kawasaki, Japan
Volume
27
Issue
20
fYear
1991
Firstpage
1862
Lastpage
1863
Abstract
The large signal design and performance is described for a fully monolithic 22 GHz-band oscillator implemented using a selfaligned AlGaAs/GaAs heterojunction bipolar transistor. The developed oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5%, and phase noise of -78 dBc/Hz at 100 kHz off-carrier under free-running conditions. These results were in good agreement with the design results obtained using a harmonic balance simulator.
Keywords
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; 22 to 22.16 GHz; AlGaAs-GaAs; HBT oscillator; SHF; harmonic balance simulator; heterojunction bipolar transistor; large signal design; monolithic microwave IC; self-aligned HBT;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911156
Filename
97222
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