A comparison of basic 94 GHz planar transmission line resonators in commercial BiCMOS back-end-of-line processes

Author

Stander, T.

Author_Institution

Dept. EEC Eng., Univ. of Pretoria, Pretoria, South Africa

Volume

1

fYear

2014

fDate

25-26 Sept. 2014

Firstpage

185

Lastpage

192

Abstract

A comparative simulation study of planar 94 GHz resonators in a typical BiCMOS BEOL stack-up is presented, with the effect of chip passivation included. It is shown that Q-factors of between 3 and 15 can be obtained, depending on transmission medium and ground plane layer choice. Straight half-wavelength and shorted quarter-wavelength microstrip resonators are shown to outperform CPW, GCPW and hairpin resonators, with highest Q-factors obtained where the lowest available metallization layer is used as ground plane. Q-factors of above 10 may also be achieve in the absence of any ground plane in CPW, which may be implemented in processes (such as GaAs or GaN) where multiple metallization layers are not readily available.

Keywords

BiCMOS integrated circuits; Q-factor; field effect MIMIC; integrated circuit metallisation; microstrip resonators; millimetre wave resonators; passivation; transmission lines; BICMOS back-end-of-line processes; BiCMOS BEOL stack-up; Q-factors; chip passivation; frequency 94 GHz; ground plane layer; metallization layer; planar transmission line resonators; shorted quarter-wavelength microstrip resonators; straight half-wavelength microstrip resonators; transmission medium; BiCMOS integrated circuits; Coplanar waveguides; Geometry; Microstrip resonators; Q-factor; System-on-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electron Devices Engineering (APEDE), 2014 International Conference on

Conference_Location

Saratov

Print_ISBN

978-1-4799-3437-9

Type

conf

DOI

10.1109/APEDE.2014.6958743

Filename

6958743