Title :
MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region
Author :
Lammert, R.M. ; Roh, S.D. ; Hughes, J.S. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 μm, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 μm) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-μm device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 μm device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-μm device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.
Keywords :
distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; integrated optics; laser cavity resonators; optical fabrication; quantum well lasers; 1 to 2 V; 1.06 to 1.08 mum; 16 mA; 33 mA; GaAs; InGaAs-GaAs-Al/sub 0.6/Ga/sub 0.4/As; MQW DBR lasers; continuous-wave threshold current; extinction ratio; modulator bias; monolithically integrated external-cavity electroabsorption modulators; operating wavelengths; red-shift; single growth step; slope efficiency; Distributed Bragg reflectors; Distributed feedback devices; Heating; Laser feedback; Laser theory; Laser transitions; Optical design; Optical materials; Quantum well devices; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
