• DocumentCode
    1555091
  • Title

    MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region

  • Author

    Lammert, R.M. ; Roh, S.D. ; Hughes, J.S. ; Osowski, M.L. ; Coleman, J.J.

  • Author_Institution
    Microelectron. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    9
  • Issue
    5
  • fYear
    1997
  • fDate
    5/1/1997 12:00:00 AM
  • Firstpage
    566
  • Lastpage
    568
  • Abstract
    We report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 μm, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 μm) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-μm device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 μm device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-μm device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.
  • Keywords
    distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; integrated optics; laser cavity resonators; optical fabrication; quantum well lasers; 1 to 2 V; 1.06 to 1.08 mum; 16 mA; 33 mA; GaAs; InGaAs-GaAs-Al/sub 0.6/Ga/sub 0.4/As; MQW DBR lasers; continuous-wave threshold current; extinction ratio; modulator bias; monolithically integrated external-cavity electroabsorption modulators; operating wavelengths; red-shift; single growth step; slope efficiency; Distributed Bragg reflectors; Distributed feedback devices; Heating; Laser feedback; Laser theory; Laser transitions; Optical design; Optical materials; Quantum well devices; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.588102
  • Filename
    588102