Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

Author

Ooi, B.S. ; Hamilton, C.J. ; McIlvaney, K. ; Bryce, A.C. ; De La Rue, R.M. ; Marsh, J.H. ; Roberts, J.S.

Author_Institution

School of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

587

Lastpage

589

Abstract

We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; integrated optics; laser materials processing; laser tuning; multiphoton processes; optical fabrication; quantum well lasers; semiconductor quantum wells; waveguide lasers; GaAs-AlGaAs; GaAs-AlGaAs structures; as-grown devices; bandgap tuned lasers; differential bandgap shifts; double-quantum-well GaAs-AlGaAs; laser irradiated samples; multiphoton absorption; photoabsorption induced disordering; photonic integrated circuit fabrication; pulsed laser irradiation; quantum-well intermixing; ridge waveguide lasers; slope efficiency; threshold current; Absorption; Dielectrics; Ion implantation; Laser transitions; Laser tuning; Optical control; Optical pulses; Photonic band gap; Pulsed laser deposition; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588128

Filename

588128