Quantum parallel laser: a unipolar superlattice interminiband laser

Author

Friedman, L. ; Soref, R.A. ; Sun, G.

Author_Institution

Rome Lab., RL/EROC, Hanscom AFB, MA, USA

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

593

Lastpage

595

Abstract

Designs are given for parallel (rather than cascade) intersubband lasing in superlattice structures of group IV and III-V materials. Structures with population inversion due to coupled wells have minibandwidths too narrow for coherent transport and the incoherent interperiod rates are too small for population of a significant number of periods. A single-well period with local population inversion gives operation in the coherent regime. An example is given for the III-V materials. Both SiGe-Si and Si-ZnS are discussed for intersubband lasing at 1-20 μm.

Keywords

Ge-Si alloys; infrared sources; laser transitions; optical design techniques; population inversion; quantum well lasers; semiconductor superlattices; silicon; spectral line breadth; 1 to 20 mum; III-V materials; Si-ZnS; SiGe quantum well laser; SiGe-Si; coherent regime; coherent transport; group IV; incoherent interperiod rates; intersubband lasing; local population inversion; minibandwidths; population inversion; quantum parallel laser; single-well period; superlattice interminiband laser; superlattice structures; Breakdown voltage; Fiber lasers; Free electron lasers; Optical materials; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Silicon; Sun; Superlattices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588133

Filename

588133