Large field-induced refractive index change without red shift of absorption edge in five-step asymmetric coupled quantum wells with modified potential

Author

Feng, H. ; Pang, J.P. ; Tada, K. ; Nakano, Y.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

639

Lastpage

641

Abstract

A structure composed of five-step asymmetric coupled quantum wells (FACQWs) is first proposed for large field-induced refractive index change without red shift of absorption edge. A strong exciton absorption peak is caused by e1hh2 and e2hh1 transitions with a small applied electric field. The field-induced refractive index change of FACQWs is larger by one order compared to that of rectangular quantum well when the operation wavelength is apart from absorption edge.

Keywords

electro-optical modulation; excitons; integrated optics; optical couplers; optical waveguides; red shift; refractive index; semiconductor quantum wells; symmetry; absorption edge; e1hh2 transitions; e2hh1 transitions; electro optical modulators; field-induced refractive index change; five-step asymmetric coupled quantum wells; large field-induced refractive index change; modified potential; operation wavelength; rectangular quantum well; red shift; small applied electric field; strong exciton absorption peak; ultrafast modulators; Electromagnetic wave absorption; Excitons; Gallium arsenide; Integrated optics; Optical waveguides; Phase modulation; Potential well; Refractive index; Semiconductor waveguides; Waveguide transitions;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588172

Filename

588172