• DocumentCode
    1555294
  • Title

    Theoretical Estimation of Electromigration in Metallic Carbon Nanotubes Considering Self-Heating Effect

  • Author

    Verma, Rekha ; Bhattacharya, Sitangshu ; Mahapatra, Santanu

  • Author_Institution
    Nanoscale Device Research Laboratory, Department of Electronic Systems Engineering (formerly CEDT), Indian Institute of Science, Bangalore, India
  • Volume
    59
  • Issue
    9
  • fYear
    2012
  • Firstpage
    2476
  • Lastpage
    2482
  • Abstract
    In this paper, we estimate the solution of the electromigration diffusion equation (EMDE) in isotopically pure and impure metallic single-walled carbon nanotubes (CNTs) (SWCNTs) by considering self-heating. The EMDE for SWCNT has been solved not only by invoking the dependence of the electromigration flux on the usual applied static electric field across its two ends but also by considering a temperature-dependent thermal conductivity (\\kappa ) which results in a variable temperature distribution (T) along its length due to self-heating. By changing its length and isotopic impurity, we demonstrate that there occurs a significant deviation in the SWCNT electromigration performance. However, if \\kappa is assumed to be temperature independent, the solution may lead to serious errors in performance estimation. We further exhibit a tradeoff between length and impurity effect on the performance toward electromigration. It is suggested that, to reduce the vacancy concentration in longer interconnects of few micrometers, one should opt for an isotopically impure SWCNT at the cost of lower \\kappa , whereas for comparatively short interconnects, pure SWCNT should be used. This tradeoff presented here can be treated as a way for obtaining a fairly well estimation of the vacancy concentration and mean time to failure in the bundles of CNT-based interconnects.
  • Keywords
    Conductivity; Current density; Electromigration; Electron tubes; Thermal conductivity; Electromigration; metallic carbon nanotubes (CNTs); self-heating; thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2202909
  • Filename
    6236123