DocumentCode :
1555518
Title :
High- 
3 b/4 b RF MEMS Digitally Tunable Capacitors for 0.8–3 GHz Applications
Author :
Patel, Chirag D. ; Rebeiz, Gabriel M.
Author_Institution :
Univ. of California at San Diego, La Jolla, CA, USA
Volume :
22
Issue :
8
fYear :
2012
Firstpage :
394
Lastpage :
396
Abstract :
A high-Q digitally tunable capacitor is demonstrated with 3 and 4 b resolutions for 0.8-3 GHz applications. The device shows a tuning range of 1.0-3.75 pF in the 3 b configuration and 1.25-3.80 pF in the 4 b configuration ( ~ 1-4 pF simulated). In addition to digital tuning, 30-530 fF of analog tuning is achieved and allows for precision tuning. The measured Q of the digitally tunable capacitor is >;100 at 1 GHz and >;60 at 2 GHz for all tuning states. A novel circular geometry maintains a high- Q as the capacitance is increased. The device is 2×1.8 mm which is ideal for tunable filters, matching networks and antennas.
Keywords :
capacitance; capacitors; micromechanical devices; tuning; analog tuning; antennas; capacitance; circular geometry; digital tuning; frequency 0.8 GHz to 3 GHz; high-Q RF MEMS digitally tunable capacitors; matching networks; precision tuning; tunable filters; tuning range; tuning states; Capacitance; Micromechanical devices; Radio frequency; Switches; Tuning; Varactors; Digital capacitor; RF MEMS; varactor;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2205301
Filename :
6236233
Link To Document :
