Crosstalk in 1.5-μm InGaAsP optical amplifiers

Author

Lassen, H.E. ; Hansem, P.B. ; Stubkjaer, K.E.

Author_Institution

Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark

Volume

6

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1559

Lastpage

1565

Abstract

A dynamical model for multichannel amplification by near-traveling-wave optical amplifiers is presented, and results on crosstalk induced by either amplitude modulation or frequency modulation are given. The mechanisms influencing the crosstalk most are the residual facet reflectivities and the detuning of the channels relative to the amplifier Fabry-Perot spectrum. Calculations of worst-case crosstalk levels are included. The model is verified experimentally for amplitude-modulated signals, and crosstalk levels up to -7 dB are reported. For frequency-modulated signals, estimated crosstalk is significantly lower and can be reduced by high quality facet coatings

Keywords

III-V semiconductors; amplitude modulation; crosstalk; frequency modulation; gallium arsenide; indium compounds; laser beam applications; optical modulation; 1.5 micron; Fabry-Perot spectrum; III-V semiconductors; InGaAsP optical amplifiers; amplitude modulation; crosstalk; detuning; frequency modulation; multichannel amplification; residual facet reflectivities; Amplitude modulation; Fabry-Perot; Frequency estimation; Frequency modulation; Optical amplifiers; Optical crosstalk; Optical modulation; Reflectivity; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.7916

Filename

7916