Title :
Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)
Author :
Niu, Guofu ; Cressler, John D. ; Mathew, Suraj J. ; Ahlgren, David C.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
The subthreshold hump in the current-voltage (I-V) characteristics caused by the current-carrying corner in shallow-trench-isolated (STI) n-channel MOSFET´s is significantly enhanced at reduced temperatures. Numerical simulations show that the sensitivity of the corner channel´s threshold voltage to temperature is smaller than that of the center channel´s threshold voltage. This, together with the reduced subthreshold swing at low temperatures, contribute to an enhanced subthreshold hump, and is potentially important for emerging cryogenic applications.
Keywords :
CMOS integrated circuits; MOSFET; cryogenic electronics; isolation technology; semiconductor device models; CMOS technology; center channel threshold voltage; corner channel threshold voltage; cryogenic applications; current-voltage characteristics; enhanced low-temperature corner current-carrying; n-channel MOSFET; numerical simulations; shallow trench isolation; subthreshold hump; subthreshold swing; CMOS technology; Cooling; Cryogenics; Length measurement; MOSFET circuits; Microelectronics; Random access memory; Temperature distribution; Temperature sensors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
