DocumentCode :
1555618
Title :
Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides
Author :
Chen, Ming-Jer ; Huang, Huan-Tsung ; Chen, Jyh-Huei ; Su, Chi-Wen ; Hou, Chin-Shan ; Liang, Mong-Song
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
20
Issue :
10
fYear :
1999
Firstpage :
523
Lastpage :
525
Abstract :
The cell-based analytic statistical model, with the cell area A/sub O/ and the critical trap number per cell n/sub BD/ both as parameters, is one of the widely cited literature models in calculating the critical density of neutral electron traps that trigger the intrinsic breakdown of ultrathin oxides. This letter reports a new correlation between A/sub O/ and n/sub BD/, which can effectively reduce the cell-based model to one with the only fitting parameter n/sub BD/. Reproduction of charge-to-breakdown data has shown that (1) n/sub BD/ decreases for reduced oxide thicknesses and (2) the range of intrinsic breakdown is relatively narrowed for increasing areas. The work also addresses the ultimate thickness limit for breakdown, as set critically at n/sub BD/=1.
Keywords :
MOS capacitors; MOSFET; Monte Carlo methods; dielectric thin films; electric breakdown; electron traps; percolation; semiconductor device breakdown; semiconductor device models; CMOS reliability; MOS capacitors; TDDB; cell area; cell-based analytic statistical model; charge-to-breakdown data; correlated parameters; critical trap density; critical trap number per cell; fitting parameter; intrinsic breakdown; lattice-based Monte Carlo model; n-MOSFET devices; neutral electron traps; reduced oxide thickness; sphere-based Monte Carlo percolation simulation program; ultimate thickness limit; ultrathin oxides; CMOS process; CMOS technology; Dielectric breakdown; Electric breakdown; Electron traps; MOSFET circuits; Monte Carlo methods; Statistics; Stress;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.791930
Filename :
791930
Link To Document :
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