Title :
Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs
Author :
Kuboyama, Satoshi ; Ikeda, Naomi ; Mizuta, Eiichi ; Abe, Hiroshi ; Hirao, Toshio ; Tamura, Takashi
Author_Institution :
Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan
Abstract :
The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was also proposed.
Keywords :
Electric breakdown; Ions; Logic gates; MOSFETs; Periodic structures; Radiation effects; Semiconductor device modeling; Heavy ions; power MOSFETs; radiation damage; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2201501
