Scintillators Based on ${\hbox {CdWO}}_{4}$ and ${\hbox {CdWO}}_{4}!!:!!{\hbox {Bi}}$ Single

This research is directed on creating by liquid phase epitaxy the single crystalline film scintillators based on undoped and Bi doped CdWO₄ compounds as well as the phoswich detector based on “CdWO₄:Bi or CdWO₄ films/CdWO₄ or CdWO₄:Bi crystals” epitaxial structures. The luminescent and scintillation properties of the undoped and Bi³⁺ doped (in a concentration range of 0.04-0.25 at. %) CdWO₄ films, grown by LPE method from Na₂WO₄ flux, were compared with the properties of CdWO₄ bulk crystal analogs, grown from melts by the Czochralski method. Using the traditional luminescence spectroscopy and the luminescence spectroscopy under excitation by pulsed synchrotron radiation with energy in the fundamental absorption range of CdWO₄ host, we have also examined the nature of different emission centers and studied energy transfer processes from tungstate hosts to Bi³⁺ ions and defect centers in CdWO₄ and CdWO₄:Bi films and their crystal analogs.