Quench of hot-electron real space transfer by electronic screening

Author

Liu, Chun-Ting ; Luryi, Serge ; Garbinski, Paul A. ; Cho, Alfred Y. ; Sivco, Deborah L.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

38

Issue

11

fYear

1991

fDate

11/1/1991 12:00:00 AM

Firstpage

2417

Lastpage

2422

Abstract

The authors report a study of the hot-electron real space transfer (RST) between two InGaAs layers separated by a 200-nm InAlAs barrier. The electron heating is generated by an electric field applied parallel to one of the layers, which represents a two-dimensional hot-electron emitter. Strong suppression of the RST by an increased concentration n_s of the emitter electrons was observed. With increasing n_s, the critical heating voltage, required to initiate the RST, increases. At a fixed heating voltage, a sudden quench of the RST is observed as n_s increases. Both phenomena are explained by an electronic screening effect which smooths out the nonuniformity of the electric field in the emitter channel

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; indium compounds; semiconductor junctions; CHINT; InGaAs-InAlAs-InGaAs; critical heating voltage; electric field nonuniformity; electronic screening; hot-electron real space transfer; quench; two-dimensional hot-electron emitter; Electron emission; Heating; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic devices; Microwave transistors; Physics; Virtual colonoscopy; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.97402

Filename

97402