DocumentCode :
1555801
Title :
30 Gbit/s InP DHBT 2:1 selector-driver IC for external laser modulation
Author :
Meghelli, Mounir ; Launay, P. ; Konczykowska, Agnieszka
Author_Institution :
Lab. de Bagneux, CNET, Bagneux
Volume :
33
Issue :
12
fYear :
1997
fDate :
6/5/1997 12:00:00 AM
Firstpage :
1057
Lastpage :
1058
Abstract :
A high speed 2:1 selector-driver IC developed for external laser modulation is presented. The IC delivers a maximum output voltage swing of 2.2 Vpp at 30 Gbit/s on a 50 Ω load. The circuit was fabricated in a laboratory InP-InGaAs double heterojunction bipolar transistor technology with F1≃56 GHz and Fmax≃43 GHz
Keywords :
III-V semiconductors; bipolar integrated circuits; digital communication; driver circuits; heterojunction bipolar transistors; indium compounds; optical communication equipment; optical modulation; 2.2 V; 2:1 selector-driver; 30 Gbit/s; 43 GHz; 56 GHz; InP DHBT; InP-InGaAs; double heterojunction bipolar transistor; external laser modulation; high speed selector-driver IC;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970726
Filename :
588437
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1555801
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