• DocumentCode
    1555808
  • Title

    Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS)

  • Author

    Feld, Stewart A. ; Beyette, Fred R., Jr. ; Hafich, Michael J. ; Lee, H.Y. ; Robinson, Gary Y. ; Wilmsen, Carl W.

  • Author_Institution
    Colorado State Univ., Fort Collins, CO, USA
  • Volume
    38
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    2452
  • Lastpage
    2459
  • Abstract
    A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR
  • Keywords
    III-V semiconductors; feedback; gallium arsenide; impact ionisation; indium compounds; integrated optoelectronics; light emitting diodes; negative resistance; optical switches; phototransistors; semiconductor switches; Early effect; InGaAs-InP; LED cladding layer; avalanche breakdown; circuit model; electrical feedback; heterojunction phototransistor; leakage resistance; light-amplifying optical switch; light-emitting diode; negative differential resistance switching; nonlinear gain; optical feedback; Electric resistance; Feedback circuits; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Nonlinear optics; Optical devices; Optical feedback; Stimulated emission; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.97408
  • Filename
    97408