DocumentCode :
1555849
Title :
Circuit modeling of the emitter-wrap-through solar cell
Author :
Smith, David D. ; Gee, James M. ; Bode, Michel D. ; Jimeno, Juan Carlos
Author_Institution :
Dept. of Voltaic Syt. Componenets, Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
46
Issue :
10
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
1993
Lastpage :
1999
Abstract :
Back-contact solar cells have the potential to reduce module assembly costs and give a higher conversion efficiency. Such a device must be simple to fabricate on an industrial scale and be tolerant of low minority-carrier diffusion lengths. The emitter-wrap-through (EWT) cell is a device design that can meet these goals. In this device, the diffused junction is present on both sides and is connected by laser-drilled holes through the silicon. EWT cells were frequently found to have poor fill factors (FFs) due to shunt-like behavior. The holes were found to possess no defects that adversely affect device performance. However, detailed equivalent circuit modeling of the EWT cell was able to explain the shunt-like behavior. Experiments were performed to confirm the physical mechanisms described by the equivalent circuit model. Device optimization guided by the equivalent circuit model has led to the demonstration of a large area EWT cell with a FF of 77.64% and efficiency of 18.2%
Keywords :
diffusion; elemental semiconductors; equivalent circuits; minority carriers; semiconductor device models; silicon; solar cells; 18.2 percent; Si; back-contact solar cells; circuit modeling; conversion efficiency; device optimization; diffused junction; efficiency; emitter-wrap-through solar cell; equivalent circuit modeling; fill factors; laser-drilled holes; minority-carrier diffusion lengths; module assembly costs; physical mechanisms; Assembly; Contacts; Costs; Equivalent circuits; Laboratories; Laser modes; Photovoltaic cells; Silicon; Surface emitting lasers; Textile industry;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.791987
Filename :
791987
Link To Document :
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