• DocumentCode
    1555870
  • Title

    High performance 1.55 μm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP

  • Author

    Emery, J.-Y. ; Ducellier, T. ; Bachmann, Michael ; Doussiere, P. ; Pommereau, Franck ; Ngo, R. ; Gaborit, F. ; Goldstein, L. ; Laube, G. ; Barrau, J.

  • Author_Institution
    Corp. Res. Center, Alcatel Alsthom Recherche, Marcoussis
  • Volume
    33
  • Issue
    12
  • fYear
    1997
  • fDate
    6/5/1997 12:00:00 AM
  • Firstpage
    1083
  • Lastpage
    1084
  • Abstract
    High performance, polarisation-independent semiconductor optical amplifier based on low-tensile-strained separate confinement heterostructures and integrated with a double core taper have been realised. Fibre-to-fibre gain as large as 29 dB, with TE-TM polarisation sensitivity as low as 0.3 dB and an output saturation power of ~9 dBm are currently achieved
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; 1.55 micron; 29 dB; GaInAsP; TE-TM polarisation sensitivity; double core taper; fibre-to-fibre gain; low-tensile-strained bulk GaInAsP; output saturation power; polarisation-insensitive semiconductor optical amplifier; separate confinement heterostructure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970703
  • Filename
    588454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1555870