High-gain lateral bipolar action in a MOSFET structure

Author

Verdonckt-Vandebroek, Sophie ; Wong, S. Simon ; Woo, Jason C S ; Ko, Ping K.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

38

Issue

11

fYear

1991

fDate

11/1/1991 12:00:00 AM

Firstpage

2487

Lastpage

2496

Abstract

A hybrid-mode device based on a standard submicrometer CMOS technology is presented. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral bipolar junction transistor (BJT). At low collector current levels, lateral bipolar action with a current gain higher than 1000 is achieved. No additional processing steps are needed to obtain the BJT when the MOSFET is properly designed. n-p-n BJTs with a 0.25-μm base width have been successfully fabricated in a p-well 0.25-μm bulk n-MOSFET process. The electrical characteristics of the n-MOSFET and the lateral n-p-n BJT at room and liquid nitrogen temperatures are reported

Keywords

BIMOS integrated circuits; bipolar transistors; insulated gate field effect transistors; integrated circuit technology; 0.25 micron; MOSFET structure; electrical characteristics; high gain lateral bipolar action; hybrid-mode device; lateral bipolar junction transistor; low collector current levels; n-p-n BJTs; submicrometer CMOS technology; BiCMOS integrated circuits; CMOS process; CMOS technology; Electric variables; MOSFET circuits; Nitrogen; Power dissipation; Substrates; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.97413

Filename

97413