Title :
High power 630 nm band laser diodes with strain-compensated single quantum well active layer
Author :
Hiroyama, R. ; Uetani, T. ; Bessho, Y. ; Shone, M. ; Sawada, Masanori ; Ibaraki, A.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
6/5/1997 12:00:00 AM
Abstract :
High power 630 nm band AlGaInP laser diodes with a strain-compensated single quantum well active layer have been successfully fabricated. The highest output power achieved was 72 mW. High power operation of 30 mW was obtained at up to 75°C; reliable operation was achieved for more than 1000 h under 30 mW at 50°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; 1000 h; 30 muW to 72 mW; 50 to 75 C; 630 nm; AlGaInP; high power laser diode; strain-compensated single quantum well active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970721
