Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs

The lateral oxidation of AlAs is becoming an important processing tool, but has proven difficult to control. A method is presented to achieve lithographic control of the lateral oxidation process. The technique uses impurity induced layer disordering in buried, heavily Si-doped layers to locally change the oxidation rate of an AlAs layer. Several types of capping conditions during the anneal are discussed