DocumentCode :
1555899
Title :
Photon emission in deep submicrometre N-channel SOI MOSFETs
Author :
Renn, S.H. ; Pelloie, J.L. ; Balestra, F.
Author_Institution :
CNRS, ENSERG, Grenoble, France
Volume :
33
Issue :
12
fYear :
1997
fDate :
6/5/1997 12:00:00 AM
Firstpage :
1093
Lastpage :
1094
Abstract :
Hot carrier effects are thoroughly investigated in deep submicrometre N-channel SOI MOSFETs using photon emission measurements. The maximal photon number (Nph) is obtained for the lower gate bias in the case of a sufficiently high drain voltage and/or small gate length. For low Vd and/or long channels, Nph is maximum around Vg≃Vd/2. These results are in agreement with those obtained in hot-carrier-induced degradations
Keywords :
MOSFET; hot carriers; luminescence; silicon-on-insulator; N-channel SOI MOSFET; NMOSFET; Si; deep submicron MOSFET; hot carrier effects; hot-carrier-induced degradations; photon emission measurements;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970709
Filename :
588461
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1555899
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