DocumentCode
1555916
Title
New developments in amorphous thin-film silicon solar cells
Author
Schropp, Ruud E.I. ; Zeman, Miro
Author_Institution
Debye Res. Inst., Utrecht Univ., Netherlands
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
2086
Lastpage
2092
Abstract
Thin-film silicon solar cells usually contain amorphous silicon layers made by plasma enhanced chemical vapor deposition (PECVD). This CVD method has the advantage that large-area devices can be manufactured at a low processing temperature, thus facilitating low-cost solar cells on glass, metal foil, or polymer foil. In order to obtain higher conversion efficiencies while keeping the manufacturing cost low, a new development is to introduce low bandgap materials in a multijunction device structure. A frequently used low bandgap material is amorphous silicon-germanium. Record initial efficiencies in excess of 15% have been reported for triple-junction solar cells comprising these alloys. In this paper, we present a novel manufacturing method for amorphous silicon based tandem cells suitable for roll-to-roll production
Keywords
amorphous semiconductors; elemental semiconductors; energy gap; plasma CVD; semiconductor thin films; silicon; solar cells; Si; amorphous semiconductor thin-films; conversion efficiencies; efficiencies; large-area devices; low bandgap materials; metal foil; multijunction device structure; plasma enhanced chemical vapor deposition; polymer foil; roll-to-roll production; solar cells; tandem cells; triple-junction devices; Amorphous materials; Amorphous silicon; Photonic band gap; Photovoltaic cells; Plasma chemistry; Plasma devices; Plasma temperature; Polymer films; Semiconductor thin films; Sputtering;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.792001
Filename
792001
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