• DocumentCode
    1555916
  • Title

    New developments in amorphous thin-film silicon solar cells

  • Author

    Schropp, Ruud E.I. ; Zeman, Miro

  • Author_Institution
    Debye Res. Inst., Utrecht Univ., Netherlands
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    2086
  • Lastpage
    2092
  • Abstract
    Thin-film silicon solar cells usually contain amorphous silicon layers made by plasma enhanced chemical vapor deposition (PECVD). This CVD method has the advantage that large-area devices can be manufactured at a low processing temperature, thus facilitating low-cost solar cells on glass, metal foil, or polymer foil. In order to obtain higher conversion efficiencies while keeping the manufacturing cost low, a new development is to introduce low bandgap materials in a multijunction device structure. A frequently used low bandgap material is amorphous silicon-germanium. Record initial efficiencies in excess of 15% have been reported for triple-junction solar cells comprising these alloys. In this paper, we present a novel manufacturing method for amorphous silicon based tandem cells suitable for roll-to-roll production
  • Keywords
    amorphous semiconductors; elemental semiconductors; energy gap; plasma CVD; semiconductor thin films; silicon; solar cells; Si; amorphous semiconductor thin-films; conversion efficiencies; efficiencies; large-area devices; low bandgap materials; metal foil; multijunction device structure; plasma enhanced chemical vapor deposition; polymer foil; roll-to-roll production; solar cells; tandem cells; triple-junction devices; Amorphous materials; Amorphous silicon; Photonic band gap; Photovoltaic cells; Plasma chemistry; Plasma devices; Plasma temperature; Polymer films; Semiconductor thin films; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.792001
  • Filename
    792001