DocumentCode
1555941
Title
Progress and future view of silicon space solar cells in Japan
Author
Suzuki, Akio ; Kaneiwa, Minoru ; Saga, Tatsuo ; Matsuda, Sumio
Author_Institution
Sharp Corp., Nara, Japan
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
2126
Lastpage
2132
Abstract
The progress and the future view of silicon (Si) space solar cells in Japan are reviewed. In 1991, two types of the high-efficiency silicon (HES) cell were developed: (1) NRS/LBSF cell; (2) NRS/BSF cell. The former shows a conversion efficiency of 18.0% (AM0, 28°C) at beginning-of-life (BOL), the latter shows superior radiation tolerance. In 1998, the radiation tolerance of the NRS/BSF cell was improved; moreover, the advanced high-efficiency silicon-1 (AHES-1) cell was accomplished. It shows 13.1% at end-of-life (EOL). The development has progressed to make the 13.7% EOL cell: AHES-2 cell. In 1994, the integrated bypass function (IBF), which prevents failures due to reverse biasing of cells, was proposed. The NRS/BSF cells with IBF have been used already on several satellites. The structures, performance, and radiation tolerances of these cells are introduced. New approaches for further improvement are proposed
Keywords
elemental semiconductors; reviews; silicon; solar cells; space vehicle power plants; technological forecasting; 13.1 percent; 13.7 percent; 18 percent; 28 C; AHES-1 cell; AM0 conversion efficiency; Japan; NRS/BSF cell; NRS/LBSF cell; Si; Si space solar cells; advanced high-efficiency silicon-1 cell; beginning-of-life; end-of-life; high-efficiency silicon cell; integrated bypass function; radiation tolerance; satellites; Europe; Gallium arsenide; History; Ionosphere; Laboratories; Photovoltaic cells; Satellites; Silicon; Space technology; Telephony;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.792007
Filename
792007
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