Single-mode laser diode at 778-nm wavelength: effect of p-doping

Author

Eliseev, P.G. ; Chelny, A.A. ; Aluev, A.B. ; Davydova, E.I. ; Kobyakova, M.Sh. ; Morozyuk, A.M.

Author_Institution

Center for High Technol. Mater., Albuquerque, NM, USA

Volume

14

Issue

1

fYear

2002

Firstpage

15

Lastpage

17

Abstract

An AlGaAs-GaAs double quantum well structure has been grown by metal-organic chemical vapor deposition. High p-doping of the cladding layer (4/spl times/10/sup 18/ cm/sup -3/) is used to optimize the performance of ridge waveguide laser diodes. A stable single-mode operation is obtained with output power of 120 mW at room temperature. The temperature constant T/sub 0/ is /spl sim/230 K. Improvements are explained by reduction of electron leakage and by the current self-distribution effect.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; doping profiles; gallium arsenide; heavily doped semiconductors; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 120 mW; 20 C; 778 nm; AlGaAs-GaAs; AlGaAs-GaAs double quantum well structure; cladding layer p-doping; current self-distribution effect; electron leakage; metal-organic chemical vapor deposition; output power; p-doping effects; performance optimization; ridge waveguide laser diodes; single-mode laser diode; stable single-mode operation; temperature constant; Chemical vapor deposition; Diode lasers; Electric resistance; Electrons; Laser modes; Laser stability; Optical waveguides; Power generation; Substrates; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.974146

Filename

974146