Title :
Noncomplimentary rewriting and serial-data coding scheme for shared-sense-amplifier open-bit-line DRAM
Author :
Utsugi, Satoshi ; Hanyu, Masami ; Muramatsu, Yoshinori ; Sugibayashi, Tadahiko
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
10/1/1999 12:00:00 AM
Abstract :
A noncomplimentary rewriting scheme is proposed for open-bit-line DRAM´s adopting a shared subsense amplifier. The scheme can theoretically cancel inter-bit-line coupling noise down to zero. In order to suppress the peak in unselected word line noise, a serial-data coding scheme was also developed, This scheme can reduce unselected word-line noise by at least 50%
Keywords :
DRAM chips; integrated circuit noise; memory architecture; inter-bit-line coupling noise; noncomplimentary rewriting scheme; serial-data coding scheme; shared-sense-amplifier open-bit-line DRAM; unselected word line noise; Circuit noise; Coupling circuits; Degradation; Fluctuations; Interference; Noise cancellation; Noise level; Noise reduction; Random access memory; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
