Ferroelectric nonvolatile memory technology: applications and integration challenges

Author

Zurcher, Peter ; Jones, Robert E. ; Chu, Peir Y. ; Taylor, Deborah J. ; White, Bruce E., Jr. ; Zafar, Sufi ; Jiang, Bo ; Lii, Yeong-Jyh Tom ; Gillespie, Sherry J.

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

20

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

175

Lastpage

181

Abstract

Challenges in the integration of ferroelectric nonvolatile memories with complementary metal-oxide-semiconductor (CMOS) technology for low-voltage and low-power applications are discussed. The main driving force for commercialization is to take advantage of the true high-speed (100 ns), low-voltage (0.9 V) write potential of ferroelectric memories. The operation of ferroelectric nonvolatile memories and different integration approaches are discussed. Specifically, the effort in integrating SrBi₂Ta₂O ₉ ferroelectrics with CMOS is reviewed. For the first time, ferroelectric capacitor and CMOS transistor properties after integration through metallization are presented

Keywords

CMOS memory circuits; bismuth compounds; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; strontium compounds; 0.9 V; 100 ns; CMOS technology; SrBi₂Ta₂O₉; ferroelectric capacitor; ferroelectric nonvolatile memory; integration approaches; low-voltage write potential; CMOS technology; Capacitors; Costs; EPROM; Ferroelectric materials; Material storage; Nonvolatile memory; Random access memory; Smart cards; Voltage;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.588571

Filename

588571