Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

Author

Reuter, Ralf ; Agethen, Michael ; Auer, Uwe ; Van Waasen, Stefan ; Peters, Dirk ; Brockerhoff, Wolfgang ; Tegude, Franz-Josef

Author_Institution

Dept. of Solid-State Electron., Gerhard-Mercator-Univ., Duisburg, Germany

Volume

45

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

977

Lastpage

983

Abstract

A new small-signal and noise-equivalent circuit for heterostructure field-effect transistors (HFET´s), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET. Furthermore, based on these results, the bias-dependence of the newly implemented small-signal equivalent elements and the equivalent intrinsic noise sources, are discussed

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; field effect transistors; gallium arsenide; impact ionisation; indium compounds; leakage currents; microwave field effect transistors; semiconductor device noise; shot noise; 2 to 18 GHz; 45 MHz to 40 GHz; HFET; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP; bias-dependent investigations; equivalent intrinsic noise sources; gate-leakage current; heterostructure field-effect transistors; impact ionization; noise behavior; noise-equivalent circuit; small-signal analysis; Circuit noise; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Tunneling; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.588612

Filename

588612