Semiconductor dynamic aperture for near-field terahertz wave imaging

Author

Chen, Q. ; Zhang, X.-C.

Author_Institution

Dept. of Physics, Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

7

Issue

4

fYear

2001

Firstpage

608

Lastpage

614

Abstract

We describe and discuss near-field terahertz wave imaging with a dynamic aperture created on a semiconductor wafer. The spatial resolution of a near-field terahertz wave imaging system with a dynamic aperture created on a GaAs wafer is determined by the diameter of the gating-beam-induced thin photocarrier layer. With a dynamic aperture created on a GaAs wafer, we have achieved a subwavelength spatial resolution of ~λ/10. In addition, near-field terahertz wave imaging with a dynamic aperture overcomes the limitations in the reported methods of near-field terahertz wave imaging. Particularly, it is free of the high-pass filtering effect. Various terahertz images are presented to show the possible applications

Keywords

III-V semiconductors; electro-optical effects; gallium arsenide; optical pulse generation; scanning probe microscopy; submillimetre wave imaging; GaAs; GaAs wafer; dynamic aperture; electrooptic sampling; gating-beam-induced thin photocarrier layer; high-pass filtering effect; near-field microscopy; near-field terahertz wave imaging; near-field terahertz wave imaging system; semiconductor dynamic aperture; semiconductor wafer; spatial resolution; Apertures; Biomedical imaging; Gallium arsenide; Optical beams; Optical filters; Optical imaging; Optical pumping; Optical saturation; Optical waveguides; Spatial resolution;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.974232

Filename

974232