Correlation between electrical resistance and microstructure in gold wirebonds on aluminum films

Author

Maiocco, Lisa ; Smyers, Donna ; Munroe, Paul R. ; Baker, Ian

Author_Institution

Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA

Volume

13

Issue

3

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

592

Lastpage

595

Abstract

Gold ball bonds attached to either pure Al films or Al films with Cu and Si additions were annealed at temperatures in the range 77-277°C for periods of up to 3000 h. Electrical resistance of the bonds was measured to within ±1 mΩ using a manual four-probe arrangement with an applied current of up to 100 mA. Nonlinear multiple regression analysis of the data produced an empirical model for the resistance increase up to 8 mΩ. The resistance increases are related to the intermetallic phases and void configurations observed

Keywords

aluminium; aluminium alloys; annealing; copper alloys; electric resistance measurement; gold; lead bonding; metallic thin films; metallisation; silicon alloys; 100 mA; 3000 h; 77 to 277 degC; Au-Al; Au-AlCuSi; Si; annealing; applied current; electrical resistance; empirical model; four-probe arrangement; gold wirebonds; intermetallic phases; microstructure; nonlinear multiple regression analysis; void configurations; Annealing; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gold; Microstructure; Regression analysis; Semiconductor films; Temperature distribution;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.58865

Filename

58865