Title :
A new method for fixed oxide charge determination using a dual-gate MOS capacitor
Author :
Iniewski, K. ; Salama, C.A.T.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
fDate :
11/1/1991 12:00:00 AM
Abstract :
A new method for fixed oxide charge determination at the silicon-silicon-dioxide interface is presented. It is based on high-frequency C-V measurements of a dual-gate MOS capacitor. Using this technique the fixed oxide charge can be accurately without knowledge of the work-function difference by means of one simple measurement. Due to its simplicity and ease of automation it can be applied to characterization and process optimization of MOS technology
Keywords :
charge measurement; elemental semiconductors; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; silicon; silicon compounds; MOS technology; Si-SiO2; dual-gate MOS capacitor; fixed oxide charge determination; high-frequency C-V measurements; process optimization; Automation; Capacitance-voltage characteristics; Channel bank filters; Charge measurement; Councils; Current measurement; MOS capacitors; Substrates; Telecommunications; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
