• DocumentCode
    1556416
  • Title

    A new method for fixed oxide charge determination using a dual-gate MOS capacitor

  • Author

    Iniewski, K. ; Salama, C.A.T.

  • Author_Institution
    Dept. of Electr. Eng., Toronto Univ., Ont., Canada
  • Volume
    38
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    2565
  • Lastpage
    2567
  • Abstract
    A new method for fixed oxide charge determination at the silicon-silicon-dioxide interface is presented. It is based on high-frequency C-V measurements of a dual-gate MOS capacitor. Using this technique the fixed oxide charge can be accurately without knowledge of the work-function difference by means of one simple measurement. Due to its simplicity and ease of automation it can be applied to characterization and process optimization of MOS technology
  • Keywords
    charge measurement; elemental semiconductors; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; silicon; silicon compounds; MOS technology; Si-SiO2; dual-gate MOS capacitor; fixed oxide charge determination; high-frequency C-V measurements; process optimization; Automation; Capacitance-voltage characteristics; Channel bank filters; Charge measurement; Councils; Current measurement; MOS capacitors; Substrates; Telecommunications; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.97425
  • Filename
    97425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1556416